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A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching

: Waltereit, P.; Preschle, M.; Müller, S.; Kirste, L.; Czap, H.; Ruster, J.; Dammann, M.; Reiner, R.


IEEE Electron Devices Society; Materials Research Society -MRS-:
76th Device Research Conference, DRC 2018 : 24-27 June 2018
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-3028-0
ISBN: 978-1-5386-3027-3
ISBN: 978-1-5386-3029-7
Device Research Conference (DRC) <76, 2018, Santa Barbara, Calif.>
Conference Paper
Fraunhofer IAF ()

The epitaxial structures are grown by metal-organic chemical vapor deposition on 4-inch Si(lll) substrates. First, a graded A1GaN buffer is deposited to mitigate lattice and thermal coefficient mismatches. Second, a thick GaN layer with an AIN interlayer is grown, followed by the AIGaN/GaN heterojunction. The structure is capped by a p-doped GaN layer. Mg is used as acceptor with a concentration around 3−4 × 1019cm−3 according to secondary ion mass spectrometry. The structural properties of the samples are investigated using high-resolution X-ray diffraction, see Figure 1. The thickness (approx. 15 nm) and composition (around 20% Aluminum) of the AIGaN barrier are well within the parameter space to obtain normally-off devices [1]. The p-doped GaN cap has a thickness around 53 nm. A two-step dry-etch process based on a ChIN 2 /0 2 plasma [2] has been adapted in order to remove the p-doped GaN cap, see Figure 2. The process is characterized by a large process window in order to provide high reproducibility.