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Hybrider, organischer Feldeffekttransistor mit oberflaechenmodifiziertem Kupfer als Source- und Drain-Elektrode

Hybrid organic thin layered field effect transistor for use in polymer circuit, has source and drain electrodes including thin copper layer whose surface area facing semiconductor layer is modified to form copper oxide layer between layers
 
: Burghart, M.; Hammerl, E.

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Frontpage ()

DE 102005005589 A: 20050207
DE 2005-102005005589 A: 20050207
DE 102005005589 A1: 20060817
German
Patent, Electronic Publication
Fraunhofer IZM ()

Abstract
Die Erfindung bezieht sich auf einen organischen Feldeffekttransistor sowie auf ein Herstellungsverfahren fuer einen solchen Feldeffekttransistor. Dieser weist eine Substratbasis 1, eine Gate-Elektrode 6 sowie eine Source- und eine Drain-Elektrode 2, 3 auf und ist dadurch gekennzeichnet, dass die Source-Elektrode 2 und die Drain-Elektrode 3 aus Kupfer bestehen und dass der an den organischen Halbleiterbereich 4 des Feldeffekttransistors angrenzende Elektrodenoberflaechenbereich 2b, 3b aus oberflaechenmodifiziertem Kupfer ausgebildet ist.

 

DE 102005005589 A1 UPAB: 20060927 NOVELTY - The transistor has a substrate base (1) made of thin, flexible polyethylene foil, and source and drain electrodes (2, 3) arranged on the substrate base. The electrodes are designed as flat electrodes. The electrodes have a thin copper layer whose surface area facing the organic semiconductor layer (4) is modified such that a copper oxide layer is formed as an intermediate layer between the copper layers and the semiconductor layer. DETAILED DESCRIPTION - The copper layers are structured by UV lithographic process and standard etching process. An INDEPENDENT CLAIM is also included for a method for manufacturing an organic field effect transistor. USE - Used in a polymer circuit, which is utilized in an active component e.g. control matrix of a flexible display, in wireless/radio readable label for a goods identification marker (all Claimed). ADVANTAGE - Modification of the surface areas of the copper layers of the electrodes avoids direct transition from copper layer to the semiconductor layer while significantly reducing the energy barrier between the copper layers and the semiconductor layer. The provision of the copper layer on the electrodes ensures economic and simple manufacturing of the field effect transistor. The copper layers are structured by UV lithographic process and standard etching process, thus avoiding the need for expensive special process e.g. vacuum process or selective etching of metallic layers. The copper layer has increased conductivity.

: http://publica.fraunhofer.de/documents/N-51825.html