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2006
Conference Paper
Titel
Effects of dielectric barrier discharge treatment on surface chemistry of silicon wafers
Abstract
Dielectric barrier discharge (DBD) treatment of silicon wafers as an activation step prior to direct wafer bonding is known to yield reasonable bond strengths already at low annealing temperatures. Different models and ideas to explain the effects of low-pressure plasma pretreatments have already been published, but so far there is few experimental material on surface modifications caused by an atmospheric-pressure DBD plasma activation. This publication presents the results of FTIR and XPS measurements on wafers which went through a standard RCA cleaning procedure and were subsequently treated in DBDs using different gases.