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Ambient pressure plasma activation for low temperature bonding

 
: Eichler, M.; Michel, B.; Thomas, M.; Klages, C.-P.; Ruddy, C.; Reinecke, H.; Reiche, M.; Radu, I.; Gabriel, M.

Bagdahn, J. ; University of Technology of Delft:
2nd International Workshop on Wafer Bonding for MEMS Technologies 2006 : 9th-11th April 2006, Halle/Saale, Tagungsband
Halle/Saale, 2006
pp.35-36
International Workshop on Wafer Bonding for MEMS Technologies <2, 2006, Halle/Saale>
English
Conference Paper
Fraunhofer IST ()

Abstract
Compared to low pressure plasma and wet chemical treatments, respectively, the activation wuth dielectric barrier discharge (DBD) is very fast, cost efficient and environmentally firendly. This paper presents several pre-treatments for low temperature wafer bonding using DBDs at atmospheric pressure. Advantages and disadvantages of these techniques will be pointed out.

: http://publica.fraunhofer.de/documents/N-51637.html