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Optical stressing of 4H-SiC material and devices

 
: Kallinger, B.; Kaminzky, D.; Berwian, P.; Friedrich, J.; Oppel, S.

:

Stahlbush, R.:
Silicon Carbide and Related Materials 2017 : International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, September 17-22, 2017, Washington, DC
Durnten-Zurich: TTP, 2018 (Materials Science Forum 924)
ISBN: 978-3-0357-1145-5
ISBN: 978-3-0357-2145-4
ISBN: 978-3-0357-3145-3
pp.196-199
International Conference on Silicon Carbide and Related Materials (ICSCRM) <2017, Washington/DC>
English
Conference Paper
Fraunhofer IISB ()

Abstract
Electrical testing with regard to bipolar degradation of high voltage SiC devices cannot be done on wafer level, but only expensively after module assembly. We show that 4H-SiC material can be optically stressed by applying high UV laser intensities, i.e., bipolar degradation as in electrical stress tests can be provoked on wafer level. Therefore, optical stressing can be used for control measurements and reliability testing. Different injection (=stress) levels have been used similar to the typical doping level of the base material and similar to the established electrical stress test. The analysis of degradation is done by photoluminescence imaging, which is a wellestablished technique for revealing structural defects such as Basal Plane Dislocations (BPDs) and Stacking Faults (SFs) in 4H-SiC epiwafers and partially processed devices.

: http://publica.fraunhofer.de/documents/N-516070.html