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20W GaN HPAs for next generation X-band T/R-modules
Ein 20W GaN Leistungsverstärker für die nächste Generation von X-Band T/R-Modulen
: Schuh, P.; Leberer, R.; Sledzik, H.; Oppermann, M.; Adelseck, B.; Brugger, H.; Behtash, R.; Leier, H.; Quay, R.; Kiefer, R.
High power amplifiers for a next generation of T/R-modules for future X-band active array antennas are realized on the bases of novel AlGaN/GaN HEMT structures, which are epitaxially grown on SiC wafer substrates. Both, hybrid and monolithically integrated circuits are designed and realized as key elements for transmit chains.
Based on hybrid designs excellent peak power levels of 23W (43,6 dBm) with an associated power added efficiency (PAE) of 29% are realized. Over a bandwidth of 2 GHz (X-band) the output power levels are above 20 W.
In a more sophisticated approach first monolithically integrated circuits (MMICs) are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 20 W (43 dBm) with an associated PAE of 30% are measured on small size 12 mm2 chips. Highest ever reported maximum power added efficiency values of up to 36.5% are achieved.