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20W GaN HPAs for next generation X-band T/R-modules

Ein 20W GaN Leistungsverstärker für die nächste Generation von X-Band T/R-Modulen
: Schuh, P.; Leberer, R.; Sledzik, H.; Oppermann, M.; Adelseck, B.; Brugger, H.; Behtash, R.; Leier, H.; Quay, R.; Kiefer, R.


Sowers, J. ; IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium Digest 2006. CD-ROM : San Francisco, California, June 11 - 16, 2006
Piscataway, NY: IEEE, 2006
ISBN: 0-7803-9542-5
International Microwave Symposium (IMS) <2006, San Francisco/Calif.>
Conference Paper
Fraunhofer IAF ()
high-power amplifier; Hochleistungsverstärker; AlGaN/GaN; HEMT; MMIC; TR module; TR Modul; x-Band

High power amplifiers for a next generation of T/R-modules for future X-band active array antennas are realized on the bases of novel AlGaN/GaN HEMT structures, which are epitaxially grown on SiC wafer substrates. Both, hybrid and monolithically integrated circuits are designed and realized as key elements for transmit chains.
Based on hybrid designs excellent peak power levels of 23W (43,6 dBm) with an associated power added efficiency (PAE) of 29% are realized. Over a bandwidth of 2 GHz (X-band) the output power levels are above 20 W.
In a more sophisticated approach first monolithically integrated circuits (MMICs) are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 20 W (43 dBm) with an associated PAE of 30% are measured on small size 12 mm2 chips. Highest ever reported maximum power added efficiency values of up to 36.5% are achieved.