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Modeling of Electron Transport in GaN-based Materials and Devices

: Vitanov, S.; Palankovski, V.; Quay, R.; Langer, E.


Jantsch, W.:
Physics of semiconductors. 28th International Conference on the Physics of Semiconductors, ICPS 2006. Vol.B : Vienna, Austria, 24 - 28 July 2006
New York, N.Y.: AIP Press, 2007 (AIP conference proceedings 893)
International Conference on the Physics of Semiconductors (ICPS) <28, 2006, Wien>
Conference Paper
Fraunhofer IAF ()
electronic; Elektronik; device simulation; Bauelement Simulation; HEMT; GaN; Monte Carlo

We employ a Monte Carlo (MC) technique to investigate stationary electron transport in GaN and AIGaN. We obtain a set of model parameters which gives agreement with experimental data available for different physical conditions (doping, temperature, electric field, etc.). We use these parameters as a basis for the development of analytical models for the numerical simulation of GaN-based high electron mobility devices employing the two-dimensional device simulator MINIMOS-NT. We study the impact of different models and effects (polarization charge, thermionic field emission, self-heating effects). Further we investigate the breakdown enhancement by adopting the field plate technique.