Modeling of Electron Transport in GaN-based Materials and Devices

We employ a Monte Carlo (MC) technique to investigate stationary electron transport in GaN and AIGaN. We obtain a set of model parameters which gives agreement with experimental data available for different physical conditions (doping, temperature, electric field, etc.). We use these parameters as a basis for the development of analytical models for the numerical simulation of GaN-based high electron mobility devices employing the two-dimensional device simulator MINIMOS-NT. We study the impact of different models and effects (polarization charge, thermionic field emission, self-heating effects). Further we investigate the breakdown enhancement by adopting the field plate technique.