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Coplanar 155 GHz MHEMT MMIC low noise amplifiers

Koplanare rauscharme MHEMT Verstärker MMIC bei 155 GHz
 
: Kantanen, M.; Kärkkäinen, M.; Varonen, M.; Karttaavi, R.; Weber, R.; Leuther, A.; Seelmann-Eggebert, M.; Närhi, T.; Halonen, K.

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Asia Pacific Microwave Conference 2006 : The 18th Asia-Pacific Microwave Conference was held in Pacifico Yokohama, Japan, 12 - 15 December 2006
Yokohama, 2006
pp.173-176
Asia Pacific Microwave Conference (APMC) <18, 2006, Yokohama>
English
Conference Paper
Fraunhofer IAF ()
low-noise amplifier (LNA); rauscharmer Verstärker; MMIC; metamorphic high electron mobility transistor; metamorpher Transistor mit hoher Elektronenbeweglichkeit; MHEMT

Abstract
This paper describe the small signal properties of four 155 GHz low noise amplifiers (LNAs). The LNAs employs a 100-nm gallium arsenide based metamorphic high electron mobility transistors with gate length of 2x15 µm in coplanar waveguide topology. The scattering parameters and noise figures of the amplifiers are presented. The measured gains at 155 GHz are 14-22 dB with the measured noise figures of 6.7-7.2 dB.

: http://publica.fraunhofer.de/documents/N-50861.html