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Field-plate optimization of AlGaN/GaN HEMTs

Optimierung von Feldplatten von AlGaN/GaN HEMTs
: Palankovski, V.; Vitanov, S.; Quay, R.


IEEE Electron Devices Society:
IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2006. CD-ROM : November 12 - 15, 2006, San Antonio, Texas, USA
Piscataway, NJ: IEEE, 2006
ISBN: 1-4244-0127-5
Compound Semiconductor Integrated Circuit Symposium (CSICS) <28, 2006, San Antonio/Tex.>
Conference Paper
Fraunhofer IAF ()
electronic; Elektronik; device simulation; Bauelement Simulation; HEMT; GaN; Monte Carlo; field plate; Feldplatte

An investigation on the field plate technique in AlGaN/GaN power HEMTs is presented. The critical geometrical variables controlling the field distribution in the channel are determined and optimized for improved device reliability using two-dimensional numerical simulations. The results are implemented in the design of devices fabricated with 600 nm down to 150 nm gate lengths. Good agreement between experimental and simulation data is achieved.