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Novel approach for the bonding of III-V on silicon tandem solar cells with a transparent conductive adhesive

Paper presented at 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa, Hawaii, June 10-15, 2018
: Heitmann, Ulrike; Kluska, S.; Bartsch, Jonas; Hauser, Hubert; Ivanov, Alexy; Janz, Stefan

Postprint urn:nbn:de:0011-n-5071166 (724 KByte PDF)
MD5 Fingerprint: dce1579630c5adf77107fa334bb6276b
Created on: 7.9.2018

2018, 5 pp.
World Conference on Photovoltaic Energy Conversion (WCPEC) <7, 2018, Waikoloa/Hawaii>
European Commission EC
H2020-Low-cost, low-carbon energy supply - Developing the next generation technologies of renewable electricity and heating/cooling; 727497; SiTaSol
Application relevant validation of c-Si based tandem solar cell processes with 30 % efficiency target
Bundesministerium für Wirtschaft und Technologie BMWi
0324151A; SOLGEL-PV
Multifunktionale Sol-Gel-Schichten für die PV-Industrie; Teilvorhaben: Materialien, Nanostrukturierung, Integration, Silizium- und Tandemsolarzellen
Conference Paper, Electronic Publication
Fraunhofer ISE ()
tandem solar cells; bonding; III-V on Si; Photovoltaik; Neuartige Photovoltaik-Technologie; Tandemsolarzelle; kristallines Silicium

The currently used options for the monolithic interconnection of sub-cells in a Si and III-V tandem solar device are direct wafer-bonding or hetero-epitaxy. Both methods are costly and difficult to transfer into an industrial process. This work presents a novel, scalable and cost -efficient process for efficient process for the interconnection of semiconductor substrates by using a transparent conductive oxide (TCO) interlayer. The TCO material is sprayed from a solution onto both sub-cells which are subsequently connected by using a hot press. The resulting bond shows optical absorption below 2% and a connecting resistivity of 2 Ωcm². Bonded samples withstood all further processing steps and thereby demonstrated mechanical stability of the bond.