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Amorphous silicon carbide rear-side passivation and reflector layer stacks for multi-junction space solar cells based on germanium sustrates

Paper presented at 44th IEEE Photovoltaic Specialists Conference 2017, Washington, DC, USA, 25.06.2017-30.06.2017
 
: Janz, Stefan; Weiss, Charlotte; Mohr, Christian; Kurstjens, Rufi; Boizot, Bruno; Fuhrmann, Bianca; Khorenko, Victor

:
Fulltext urn:nbn:de:0011-n-5070238 (604 KByte PDF)
MD5 Fingerprint: fe0896900e2086372d184939da93d500
Created on: 1.9.2018


2017, 5 pp.
Photovoltaic Specialists Conference (PVSC) <44, 2017, Washington/DC>
European Commission EC
H2020-Industrial Leadership - COMPET - Bottom-up space technologies at low TRL; 687336; SiLaSpaCe
Si based Layer Stacks for Rear-Side Passivation and Enhanced Reflection of GaInP/GaInAs/Ge Triple-Junction Space Solar Cells
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
space solar cell; SIC passivation; Ge; Materialien - Solarzellen und Technologie; Photovoltaik; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen; solar cell; passivation

Abstract
New developments for space solar cells mainly address efficiency improvements and weight reduction. In this paper we developed amorphous SiC based layer stacks for passivation and enhanced reflection on thin and lowly doped (2x1016 - 1x1017 at/cm3) Ge wafers. Passivated Ge samples with minority carrier lifetimes of more than 300 μs and surface recombination velocities of just 17 cm/s are presented. Thermal annealing at 400 °C and additional “mirror” layer deposition do not harm the minority carrier lifetimes or lead to an even slight increase. Electron irradiation with fluences of 1x1015 e/cm2 and more lead to strong material degradation and lifetimes of just 5 μs.

: http://publica.fraunhofer.de/documents/N-507023.html