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Low-frequency dispersion and state dependency in modern microwave III-V HEMTs

: Raay, Friedbert van; Schwantuschke, Dirk; Leuther, Arnulf; Brueckner, Peter; Peschel, Detlef; Quay, Rüdiger; Schlechtweg, Michael


Institute of Electrical and Electronics Engineers -IEEE-:
11th German Microwave Conference, GeMiC 2018 : Riding the green waves, 12-14 March 2018, Freiburg, Germany
Piscataway, NJ: IEEE, 2018
ISBN: 978-3-9812668-8-7
ISBN: 978-1-5386-3740-1
German Microwave Conference (GeMiC) <11, 2018, Freiburg>
Conference Paper
Fraunhofer IAF ()
AlGaN/GaN HEMT modeling; trapping effects; low-frequency (LF) dispersion; state modeling; model verification

An AlGaN/GaN HEMT- and an InAlAs/InGaAs mHEMT technology, both with a gate-length of 100 nm, are investigated w.r.t. low-frequency dispersion and state dependency vs. average gate and drain voltages. Based on a comprehensive DC-CW and pulsed-RF small-signal characterization, it is shown that the GaN HEMT shows both effects, while the m HEMT is nearly free of state dependency. A new formulation of the recently proposed integral transform large-signal FET model is capable of describing both effects in pulsed-RF and even in CW load-pull operation conditions.