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Gating hysteresis as an indicator for silicon nanowire FET biosensor

: Ibarlucea, Bergoi; Römhildt, Lotta; Zörgiebel, Felix; Pregl, Sebastian; Vahdatzadeh, Maryam; Weber, Walter M.; Mikolajick, Thomas; Opitz, Jörg; Baraban, Larysa; Cuniberti, Gianaurelio

Fulltext ()

Applied Sciences 8 (2018), No.6, Art. 950, 13 pp.
ISSN: 2076-3417
Journal Article, Electronic Publication
Fraunhofer IKTS ()
silicon nanowire; field effect transistor; nanosensor; sub-threshold regime; transfer characteristic; hysteresis; aptamers; human α-thrombin

We present a biosensor chip with integrated large area nanowire-based field effect transistors (FET) for human α-thrombin detection and propose to implement the hysteresis width of the FET transfer curve as reliable parameter to quantify the concentration of biomolecules in the solution. We further compare our results to conventional surface potential based measurements and demonstrate that they respond at a different analyte concentration range. A combination of both approaches would provide broader possibilities for detecting biomolecules that are present in a sample at highly variable concentrations, or different biomolecules that can be found at very different levels. Finally, we qualitatively discuss the physical and chemical origin of the hysteresis signal and associate it with the dimerization of thrombin molecules upon binding to the receptor at the nanowire surface.