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Isotropic plasma texturing of mc-Si for industrial solar cell fabrication

 
: Rentsch, J.; Kohn, N.; Bamberg, F.; Roth, K.; Peters, S.; Lüdemann, R.; Preu, R.

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Fulltext urn:nbn:de:0011-n-505920 (214 KByte PDF)
MD5 Fingerprint: 67db9794b7156d0319cf7a17694df3d0
© 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Created on: 12.10.2012


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
Thirty-First IEEE Photovoltaic Specialists Conference 2005. Conference record : Coronado Springs Resort, Lake Buena Vista, FL, January 3 - 7, 2005
Piscataway, NJ: IEEE, 2005
ISBN: 0-7803-8707-4
pp.1316-1319
Photovoltaic Specialists Conference (PVSC) <31, 2005, Lake Buena Vista/Fla.>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
Plasma texturing has been an active area of research for many years mainly focussing on the optimization of the surface morphology to reduce overall reflection losses. Most of these studies have been carried out on laboratory-type etching systems suitable for single wafer treatment. Within this work, plasma texturing of multicrystalline (mc) silicon for industrial application with a dynamic plasma etching system is presented. For an evaluation of achievable surface morphologies, the influence of the oxygen content of a SF6/O2 etch gas mixture has been investigated. With an optimized process, the created surface textures result in weighted reflectance values on mc-Si below 15 %. First cell results show significantly higher short circuit currents and approximately 3 % relative higher conversion efficiencies compared to wet chemically etched non-textured standard industrial mc-Si solar cells.

: http://publica.fraunhofer.de/documents/N-50592.html