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Interface-engineered EUV multilayer mirrors

: Yulin, S.; Benoit, N.; Feigl, T.; Kaiser, N.


Loeschner, H.:
31st International Conference on Micro- and Nano-Engineering 2005. Proceedings : 19 - 22 September 2005, Vienna, Austria
Amsterdam: Elsevier, 2006 (Microelectronic engineering 83.2006,4/9)
International Conference on Micro- and Nano-Engineering (MNE) <31, 2005, Vienna>
Conference Paper, Journal Article
Fraunhofer IOF ()
EUVL; Mo/Si interface-engineered multilayer; high reflectivity and thermal stability

Most applications of Mo/Si multilayer optics in EUV lithographic systems require a high normal-incidence reflectivity. Using dc-magnetron sputtering we achieved R = 68.8% at the wavelength of 13.5 nm. Different interface-engineered Mo/X/Si/X multilayers with a maximum reflectivity of 69.6% were developed. These new multilayer mirrors consist of molybdenum and silicon layers separated by different interdiffusion barriers (X = C and SiC). The Mo/C/Si/C interface-engineered mirrors were optimized in terms of high peak reflectivity at a wavelength near 13.5 nm (Rp {greater than or slanted equal to} 60.0%) and broad operating temperature range (T = 20-500 °C). The best results were obtained with 0.8 nm thicknesses of carbon interlayers on both interfaces. The combination of good optical properties and high thermal stability of interface-engineered Mo/C/Si/C multilayer mirrors underlines their potential for their use in EUV optics.