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Metallisation of boron-doped polysilicon layers by screen printed silver pastes

: Mack, S.; Schube, J.; Fellmeth, T.; Feldmann, F.; Lenes, M.; Luchies, J.-M.


Physica status solidi. Rapid research letters 11 (2017), No.12, Art. 1700334
ISSN: 1862-6254
ISSN: 1862-6270
Journal Article
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Photovoltaik; Silicium-Photovoltaik; Dotierung und Diffusion; Oberflächen: Konditionierung; Passivierung; Lichteinfang; Kontaktierung und Strukturierung; poly-si; Metallisierung; Siebdruck; LPCVD; Kontakt

In this work, we report on hole selective passivating contacts, which consist of a SiOx tunnel layer and an in situ boron‐doped 300 nm thick p+ polysilicon layer deposited by LPCVD. Using a SiNx:H capping layer, we show an extremely low dark saturation current density J0 of 1 fA cm−2 after contact firing. At the same time, we demonstrate that commercially available and screen‐printed fire through Ag pastes are capable of contacting the p+ polysilicon layer, with minimum contact resistance ρc = 2 mΩ cm2. We do find increased interface recombination below the metal contacts of around 250 fA cm−2, which represents a considerable advance compared to conventional screen printed metallisation on diffused junctions.