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A beyond 110 GHz GaN cascode low-noise amplifier with 20.3 dBm output power

: Weber, Rainer; Ćwikliński, Maciej; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Brueckner, Peter; Quay, Rüdiger


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2018 : June 10 - June 15, 2018, Philadelphia, Pennsylvania
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-5067-7
International Microwave Symposium (IMS) <2018, Philadelphia/Pa.>
Conference Paper
Fraunhofer IAF ()
monolithic microwave integrated circuit (MMIC); gallium nitride (GaN); high electron mobility transistor (HEMT); cascode; low-noise amplifier (LNA); W-band (75-110 GHz); D-band (110-170 GHz); grounded coplanar waveguide (GCPW)

In this paper, we report on the first mm-wave GaN based low-noise amplifier using a cascode configuration. This MMIC has a small-signal gain well above 30 dB and a noise figure in the range of 7.6 dB at 104 GHz Moreover, the use of gallium nitride technology allows for achieving state-of-the-art saturated output power, up to 20.3 dBm or 1.3 W/mm at 115 GHz. To our knowledge, the measured gain, noise figure, and output power levels are the best among any of the GaN MMICs beyond 110 GHz reported to date.