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First full W-band GaN power amplifier MMICs with novel broadband radial stubs and 50 GHz of bandwidth

: Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Lozar, Roger; Massler, Hermann; Wagner, Sandrine; Quay, Rüdiger


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2018 : June 10 - June 15, 2018, Philadelphia, Pennsylvania
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-5067-7
International Microwave Symposium (IMS) <2018, Philadelphia/Pa.>
Conference Paper
Fraunhofer IAF ()
broadband; gallium nitride (GaN); high electron mobility transistor (HEMT); monolithic microwave integrated circuit (MMIC); power amplifier (PA); radial stub; W-band (75-110 GHz)

We report on the first-ever GaN power amplifier MMICs covering the full W-band (75-110 GHz). They can provide more than 8 dB (3-stage version) and 11 dB (4-stage) of gain over 50 GHz of bandwidth. The average output power and power-added efficiency of the 3-stage PA over 70-110 GHz are 26.2dBm and 6.5 %, respectively, while for the 4-stage PA they are 26.6dBm and 5.2 %, respectively. Additionally, in this work we introduce for the first time a novel layout of a radial stub, able to deliver -15 dB rejection bandwidth of 28.7 %, which is nearly a factor of two improvement over the conventional radial stub without any substantial area penalty. Applying this type of stub in the design allowed for a significant boost of the overall bandwidth. Due to their unique combination of bandwidth and output power, these amplifiers could be a suitable building block for wideband communication, measurement, or phased-array systems.