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GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate

Hybride und MMIC GaN/AIGaN HEMT Mikrostreifenverstärker auf s.i. SiC-Substraten
: Quay, R.; Kiefer, R.; Raay, F. van; Reiner, R.; Kappeler, O.; Müller, S.; Dammann, M.; Bronner, W.; Mikulla, M.; Schlechtweg, M.; Wiegner, D.; Seyfried, U.; Templ, W.; Weimann, G.


Physica status solidi. C 3 (2006), No.3, pp.473-477
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
Journal Article
Fraunhofer IAF ()
microstrip transmission line; Mikrostreifenleitung; GaN; HEMT; power amplifier; Leistungsverstärker; MMIC; hybrid; Hybridverstärker

This work presents very recent examples for the realization of high-power amplifiers for both communication and solid-state radar applications based on AlGaN/GaN HEMTs on s.i. SiC substrate. Broadband power amplifiers for mobile communication base stations between 0.9 and 2.7 GHz are presented. Microstrip line X-frequency band power amplifiers provide pulsed output power levels of 10 W with 16 dB of gain at 9 GHz. This work further shows improved device reliability results at V(ind DS) = 30 V and 200 °C channel temperature for gate lengths of 300 nm.