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X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC

Röntgentopographie an (Al,Ga)N/GaN basierenden elektronischen Bauelementstrukturen auf SiC
 
: Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N.

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Applied surface science 253 (2006), No.1, pp.209-213
ISSN: 0169-4332
Symposium P "Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices <2005, Strasbourg>
European Materials Research Society (Spring Meeting) <2005, Strasbourg>
English
Journal Article, Conference Paper
Fraunhofer IAF ()
x-ray topography; Röntgentopographie; x-ray diffraction; Röntgendiffraktometrie; structural defect; Strukturdefekt; SiC; GaN; HEMT

Abstract
Structural defects and their impact on the performance, lifetime and reliability of electronic devices are of permanent interest for crystal growers and device manufacturers. This is especially true for epitaxial (Al, Ga)N/GaN based high electron mobility transistor (HEMT) structures on 4H-SiC (0 0 0 1) substrates. This work points out how micropipes, dislocations and grain boundaries present in a 4H-SiC (0 0 0 1) wafer and subsequently overgrown with an (Al, Ga)N-GaN-HEMT layer sequence show up in X-ray topographic images and two-dimensional XRD maps. Using X-ray topography in transmission geometry, micropipes and other structural defects are localized non-destructively below structured metallization layers with a spatial resolution of a few tens of micrometers.

: http://publica.fraunhofer.de/documents/N-50347.html