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6 kW bidirectional, insulated on-board charger with normally-off GaN gate injection transistors

: Endres, S.; Sessler, C.; Zeltner, S.; Eckardt, B.; Morita, T.

MESAGO PCIM GmbH, Stuttgart:
PCIM Europe 2017, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Proceedings : Nuremberg, 16 - 18 May 2017
Berlin: VDE Verlag, 2017
ISBN: 978-3-8007-4424-4
PCIM Europe <2017, Nuremberg>
Conference Paper
Fraunhofer IISB ()

This paper describes a bidirectional insulated onboard charger (OBC) based on normally-off GaN gate injection transistors (GaN-GIT) and shows that, by using 600 V GaN GITs in a totem pole PFC together with a CLLC converter with variable turns-ratio, a complete bidirectional insulated 6 kW on-board charger, as shown in Fig. 1, can be realized in only 2 dm3. Besides the description of the topology, especially the modular buildup of the prototype will be shown, as well as measurements.