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Emission enhancement from MoS2 monolayers with silicon nanoantennas

 
: Bucher, T.; Vaskin, A.; George, A.; Chong, K.E.; Fasold, S.; Choi, D.-Y.; Eilenberger, F.; Kivshar, Y.S.; Pertsch, T.; Turchanin, A.; Staude, I.

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Institute of Electrical and Electronics Engineers -IEEE-:
Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, CLEO/Europe-EQEC 2017 : 25-29 June 2017, Munich, Germany
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-6736-7
ISBN: 978-1-5090-6737-4
pp.1469
Conference on Lasers and Electro-Optics Europe (CLEO) <2017, Munich>
European Quantum Electronics Conference (EQEC) <2017, Munich>
English
Conference Paper
Fraunhofer IOF ()

Abstract
Transition-metal-dichalcogenides (TMDs), which exhibit an indirect electronic band gap as bulk crystals, can become direct semiconductors in the monolayer phase [1]. Such monolayer TMDs show unique optical properties arising from the strong two-dimensional confinement of excitons as well as from the reduction in crystal symmetry. However, the strong mismatch in length scale between the sub-nanometer thickness of an atomically thin crystal sheet and the wavelength of propagating infrared or visible light leads to a rather weak light-matter interaction. By tailoring the near-field environment of monolayer TMDs, resonant optical antennas can strongly modify the excitation response [2]. While research efforts targeted at tailoring and enhancing light-matter interactions in monolayer TMDs have so far been limited to plasmonic nanoantennas, here we concentrate on high-index dielectric nanoantennas, which can show negligible intrinsic losses and thus a high radiation efficiency in the visible and near-infrared spectral range.

: http://publica.fraunhofer.de/documents/N-502728.html