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Effect of wafer-level silicon cap packaging on BiCMOS embedded RF-MEMS switch performance

: Wipf, S.T.; Göritz, A.; Wietstruck, M.; Cirillo, M.; Wipf, C.; Zoschke, K.; Kaynak, M.


International Microelectronics and Packaging Society -IMAPS-, Nordic Chapter; Institute of Electrical and Electronics Engineers -IEEE-:
IMAPS Nordic Conference on Microelectronics Packaging, NordPac 2017 : June 18-20, 2017, Göteborg, Sweden
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5386-3055-6
ISBN: 978-1-5386-3056-3 (Print)
Nordic Conference on Microelectronics Packaging (NordPac) <2017, Göteborg>
Conference Paper
Fraunhofer IZM ()

In this paper, the effect of silicon (Si) cap packaging on the BiCMOS embedded RF-MEMS switch performance is studied. The RF-MEMS switches are designed and fabricated in a 0.25μm SiGe BiCMOS technology for K-band (18 - 27 GHz) applications. The packaging is done based on a wafer-to-wafer bonding technique and the RF-MEMS switches are electrically characterized before and after the Si cap packaging. The experimental data shows the effect of the wafer-level Si cap package on the C-V and S-parameter measurements. The performed 3D FEM simulations prove that the low resistive Si cap, specifically 1Ω·cm, results in a significant RF performance degradation of the RF-MEMS switch in terms of insertion loss.