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70 dB signal-to-noise ratio at 3 THz using locally doped InGaAs-based photoconductive detectors

: Kohlhaas, R.B.; Nellen, S.; Liebermeister, L.; Globisch, B.; Schell, M.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
42nd International Conference on Infrared, Millimeter, and Terahertz Waves 2017 : Cancun, Quintana Roo, Mexico, August 27-September 1, 2017
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-6050-4
ISBN: 978-1-5090-6048-1
ISBN: 978-1-5090-6049-8
ISBN: 978-1-5090-6051-1
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) <42, 2017, Cancun>
Conference Paper
Fraunhofer HHI ()

This article investigates photoconductive THz detectors based on low-temperature-grown InGaAs/InAlAs with a localized Be doping profile. With this approach we address the inherent trade-off between ultrafast carrier trapping and high mobility in photoconductors. The processed detector antennas show an excellent performance and feature a detection bandwidth of more than 6 THz and a signal-to-noise ratio of 70 dB at 3 THz.