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Highly efficient and compact single phase PV inverter with GaN transistors at 250 kHz switching frequency

: Derix, D.; Hensel, A.; Freiche, R.


Institute of Electrical and Electronics Engineers -IEEE-:
19th European Conference on Power Electronics and Applications, EPE 2017, ECCE Europe : 11-14 September 2017, Warsaw, Poland, Poland
Piscataway, NJ: IEEE, 2017
ISBN: 978-90-75815-27-6
ISBN: 978-90-75815-26-9
ISBN: 978-1-5386-0530-1
European Conference on Power Electronics and Applications (EPE) <19, 2017, Warsaw>
Conference Paper
Fraunhofer ISE ()
elektrisches Energiesystem; Energiesystemtechnik; Leistungselektronik

The application of Gallium Nitride (GaN) power transistors in a single phase inverter for photovoltaic (PV) systems is presented inverter. The power of the system is 2 kW. For both stages (DC boost stage and inverter stage), a very high switching frequency of 250 kHz is used. By this, a highly compact design for the inverter (200 x 150 x 80 mm3 / 2.4 l) was reached. The power to weight ratio corresponds to 1.2 kW/kg and the power to volume ratio to 0.85 kW/l. Despite the high switching frequency, a maximum efficiency of 98% is reached. Compared to state of the art PV inverters, the size of the developed inverter was reduced by a factor of 5 while still maintaining a similar or even higher efficiency by means of an about 10 times higher switching frequency which is made possible with the use of GaN transistors.