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Near infrared absorption and room temperature photovoltaic response in AIN/GaN superlattices grown by metal-organic vapor-phase epitaxy

Infrarotnahe Absorption und Raumtemperatur photovoltaisches Ansprechverhalten von MOCVD-gewachsenen AIN/GaN-Übergittern
 
: Baumann, E.; Giorgetta, F.R.; Hofstetter, D.; Golka, S.; Schrenk, W.; Strasser, G.; Kirste, L.; Nicolay, S.; Feltin, E.; Carlin, J.F.; Grandjean, N.

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Applied Physics Letters 89 (2006), No.4, Art. 041106, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
English
Journal Article
Fraunhofer IAF ()
AlN/GaN; near infrared absorption; infrarotnahe Absorption; photovoltaic response; photovoltaisches Ansprechverhalten; superlattice; Übergitter

Abstract
We report on intersubband absorption of near infrared radiation in AlN/GaN superlattice structures grown by metal-organic vapor-phase epitaxy. A good correlation between well thickness and absorption peak energy was obtained. One sample shows a photovoltaic signal which overlaps well with the corresponding absorption curve at around 1.5 µm (830 meV), a common wavelength in optical fiber telecommunication systems. This photovoltaic signal is strongest at temperatures around 75 K and persists up to room temperature. The frequency response of this sample was measured with a modulated 1.5 µm laser diode. The amplitude of the response was highest for a frequency of 36 kHz.

: http://publica.fraunhofer.de/documents/N-50238.html