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Effect of Fe-Ga pairs dissociation and association processes on recombination lifetimes in multicrystalline Si solar cells

: Dhamrin, M.; Kamisako, K.; Saitoh, T.; Schultz, O.; Glunz, S.W.; Eguchi, T.; Hirasawa, T.; Yamaga, I.

Fulltext urn:nbn:de:0011-n-501766 (143 KByte PDF)
MD5 Fingerprint: eace9e683bb69268d81906f34a8f4c1a
Created on: 12.10.2012

20th European Photovoltaic Solar Energy Conference 2005. Proceedings : Barcelona, 6-10 June 2005
München: WIP-Renewable Energies, 2005
ISBN: 3-936338-19-1
European Photovoltaic Solar Energy Conference <20, 2005, Barcelona>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

The recombination properties of Fe-Ga pairs in Ga-doped multicrystalline silicon wafers is investigated by means of effective lifetime measurements using quasi-steady-state photoconductance (QSSPC) and deep level spectroscopy (DLTS) techniques. A procedure to calculate active Fe concentrations in Ga-doped mc-Si wafers is developed based on the recombination parameters obtained from this study. The effect of Fe-Ga association and dissociation on solar cell output characteristics is simulated using PC-1D and experimental prove is given. In addition, the diffusion coefficient of iron in Ga-doped mc-Si is measured by monitoring the re-pairing effective lifetime decay as function of time.