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Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs

 
: Huerner, A.; Heckel, T.; Enduschat, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.

:

Stahlbush, R.:
Silicon Carbide and Related Materials 2017 : International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, September 17-22, 2017, Washington, DC
Durnten-Zurich: TTP, 2018 (Materials Science Forum 924)
ISBN: 978-3-0357-1145-5
ISBN: 978-3-0357-2145-4
ISBN: 978-3-0357-3145-3
pp.901-904
International Conference on Silicon Carbide and Related Materials (ICSCRM) <2017, Washington/DC>
English
Conference Paper
Fraunhofer IISB ()
body-diode; gate-voltage; MOSFET; Silicon Carbide (SiC)

Abstract
In this study, the influence of the gate-source voltage on the forward conduction properties of the body-diode in SiC-MOSFETs is demonstrated experimentally and analyzed by numerical simulations. Thereby, it can be figured out that the conduction properties of the body-diode strongly depend on the operational state of the MOS-capacitor. In depletion case, the current via the body-diode is dominant, whereby in accumulation and inversion mode the current mainly flows through the MOS-channel.

: http://publica.fraunhofer.de/documents/N-497582.html