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High power continuous wave operation of a GaSb-based VECSEL emitting near 2.3 µm

Hohe Leistung im Dauerstrichbetrieb eines GaSb-basierenden Halbleiter-Scheibenlasers bei 2.3 µm
: Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A.


Physica status solidi. C 3 (2006), No.3, pp.386-390
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
Journal Article
Fraunhofer IAF ()
GaSb; VECSEL; surface emitting lasers; optical pumping; Halbleiter-Scheibenlaser; oberflächenemittierender Laser; optisches Pumpen

We report on a GaSb-based optically pumped vertical external cavity surface-emitting laser (VECSEL) operating near 2.3 µm. The epitaxial layer structure has been analyzed by high-resolution X-Ray diffraction, as well as reflectivity and photoluminescence (PL) spectroscopy. PL recorded from the side facet of a cleaved sample is used to determine the true quantum well emission spectrum. CW laser operation is observed at room temperature for substrate-side-down mounted samples even without thinning the substrate. Laser output power is significantly increased to >300 mW when using an intra-cavity polycrystalline diamond heat spreader bonded to the semiconductor chip. The temperature-dependence of the VECSEL characteristics is explained by changes in the relative alignment of the cavity resonance and the gain spectrum.