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GaSb-based tapered diode lasers at 1.93 µm with 1.5-W nearly diffraction-limited power

GaSb-basierende Trapezlaser mit einer Wellenlänge von 1.93 µm und einer nahezu beugungsbegrenzten Leistung von 1.5W
 
: Pfahler, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Rattunde, M.; Schmitz, J.; Wagner, J.

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IEEE Photonics Technology Letters 18 (2006), No.6, pp.758-760
ISSN: 1041-1135
English
Journal Article
Fraunhofer IAF ()
AlGaAsSb; GaInAsSb; GaSb; mid-infrared; molecular beam epitaxy; semiconductor laser; tapered laser; high brightness; mittleres Infrarot; Molekularstrahlepitaxie; Halbleiterlaser; Trapezlaser; hochbrillant

Abstract
High-power high-brightness 1.93-µm wavelength (AlGaIn)(AsSb) tapered diode lasers with a narrow vertical waveguide design are reported for the first time. A nearly diffraction-limited continuous-wave output power of 1.5 W together with a remarkable low fast axis divergence of 43° full-width at half-maximum have been demonstrated. The maximum brightness amounts to 32 MW/cm2 sr.

: http://publica.fraunhofer.de/documents/N-49558.html