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Optically detected magnetic resonance studies of point defects in Ga(Al)NAs

Untersuchung der optisch detektierten magnetischen Resonanz von Punktdefekten in Ga(Al)NAs
: Vorona, I.P.; Mchedlidze, T.; Dagnelund, D.; Buyanova, I.A.; Chen, W.M.; Köhler, K.


Physical Review. B 73 (2006), No.12, Art. 125204, 6 pp.
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
Journal Article
Fraunhofer IAF ()
III-V semiconductor; optical spectroscopy; material property; III-V Halbleiter; optische Spektroskopie; Materialeigenschaft

An optically detected magnetic resonance (ODMR) study of Ga(Al)NAs alloys grown by molecular beam epitaxy on GaAs substrates is presented. A number of grown-in defects were observed which act as nonradiative recombination centers. A detailed analysis of experimental data using a spin Hamiltonian leads to the identification of two Gai defects. A comparison with similar defects in other phosphide-based diluted nitride III-V compounds, such as GaAlNP and GaInNP, allows us to obtain additional information about the nearest surrounding of the defects. A discussion of possible models for other defects observed in the experiments is also presented.