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Correlation of band formation and local vibrational mode structure in Ga(0.95)Al(0.05)As(1-x)N(x) with 0<= x <= 0.03

Korrelation von Bandformierung und lokaler Schwingungsmodenstruktur in Ga(0,95)Al(0,05)As(1-x)N(x) mit 0 <= x <= 0,03
 
: Güngerich, M.; Klar, P.J.; Heimbrodt, W.; Volz, K.; Köhler, K.; Wagner, J.; Polimeni, A.; Capizzi, M.; Alt, H.C.; Gomeniuk, Y.V.

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Physica status solidi. C 3 (2006), No.3, pp.619-622
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
English
Journal Article
Fraunhofer IAF ()
III-V semiconductor; optical spectroscopy; material property; III-V Halbleiter; optische Spektroskopie; Materialeigenschaft

Abstract
We present comprehensive optical studies of a series of as-grown and hydrogenated Ga(0.95)Al(0.05)As(1-x)N(x) epitaxial layers with various amounts x of substitutional nitrogen. Photomodulated and contactless electromodulated spectroscopies were performed to gain information about the influence of N incorporation on the band structure. The results are interpreted in terms of the band-anticrossing model and compared to corresponding GaAs:N data. The local vibrational properties of the N atoms studied by Raman and Fourier-transform infrared absorption were found to depend strongly on the Ga/Al nearest-neighbour configurations of N. Correlations between local N environments and global band structure properties are confirmed by comparing results obtained before and after hydrogenation of the samples.

: http://publica.fraunhofer.de/documents/N-49550.html