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Room temperature bonding of nanostructured silicon wafers and mechanical characterization

: Stubenrauch, M.; Fischer, M.; Bernasch, M.; Bagdahn, J.

Bagdahn, J. ; University of Technology of Delft:
2nd International Workshop on Wafer Bonding for MEMS Technologies 2006 : 9th-11th April 2006, Halle/Saale, Tagungsband
Halle/Saale, 2006
International Workshop on Wafer Bonding for MEMS Technologies <2, 2006, Halle/Saale>
Conference Paper
Fraunhofer IWM ()
wafer bonding; black silicon; strength

A new method for bonding of two silicon wafers at room temperature is presented. The technique is based on the interlocking of needle-like structured surfaces. The required nano structure (black silicon) is fabricated using a reactive ion etch process with gas chopping. The needles on the surface have a length of 15-25 µm and a diameter of 300-500 nm with a pitch in the range of their diameters. An external pressure is applied to bond the two aligned wafers at room temperature. The retention force can reach up to 3.8 MPa. Interfacial energy values larger than 2 J/m2 were measured.