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Modeling edge recombination in silicon solar cells

: Fell, Andreas; Schön, Jonas; Müller, Matthias; Wöhrle, Nico; Schubert, Martin C.; Glunz, Stefan W.

Postprint urn:nbn:de:0011-n-4917102 (688 KByte PDF)
MD5 Fingerprint: bc0298045908cfad08e38eb534e54ae8
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Created on: 4.5.2018

IEEE Journal of Photovoltaics 8 (2018), No.2, pp.428-434
ISSN: 2156-3381
ISSN: 2156-3403
European Commission EC
H2020; 655852; Quokka Maturation
A mature Quokka for everyone - advancing the capabilities and accessibility of numerical solar cell simulations
Bundesministerium für Wirtschaft und Technologie BMWi
0324145; PV-BAT400
PV-BAsisTechnologie für Hocheffiziente Module mit 400W Leistung und einer Leistungsdichte von 240 W/m²
Journal Article, Electronic Publication
Fraunhofer ISE ()
modeling; silicon solar cell; simulation; Quokka; edge losses; Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen

A new approach to model edge recombination in silicon solar cells is presented. The model accounts for recombination both at the edge of the quasi-neutral bulk as well as at an exposed space-charge-region (SCR), the latter via an edge-length-specific diode property with an ideality factor of 2: a localized J02,edge. The model is implemented in Quokka3, where the J02, edge is applied locally to the edges of the three-dimensional geometry, imposing less simplifying assumptions compared with the common way of applying it as an external diode. A “worst-case” value for J02,edge, assuming very high surface recombination, is determined by fitting to full detailed device simulations which resolve the SCR recombination. A value of ~19 nA/cm is found, which is shown to be largely independent of device properties. The new approach is applied to model the impact of edge recombination on full cell performance for a substantial variety of device properties. It is found that recombination at the quasi-neutral bulk edge does not increase the J02 of the dark J-V curve, but still shows a nonideal impact on the light J-V curve similar to the SCR recombination. This needs to be considered in the experimental evaluation of edge losses, which is commonly performed via fitting J02 to dark J-V curves.