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A new behavioral model for accurate loss calculations in power semiconductors

 
: Pai, A.P.; Reiter, T.; Maerz, M.

MESAGO PCIM GmbH, Stuttgart:
PCIM Europe 2016. Proceedings. CD-ROM : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, 10 - 12 May 2016
Berlin: VDE-Verlag, 2016
ISBN: 978-3-8007-4186-1
ISBN: 3-8007-4186-5
pp.1315-1323
International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management <2014, Nuremberg>
English
Conference Paper
Fraunhofer IISB ()

Abstract
In this paper, a new behavioural model is proposed for calculating power losses in power semiconductor switches. In contrast to models existing in literature which mostly model losses only in terms of Ic/f, Vdc and Tj, this paper also takes into account Rg and Vge which heavily affect the losses but are generally neglected. Moreover, the model also calculates losses as a function of the chip area per switch, which makes this model ideal for calculating the optimum chip area for a given application. The accuracy of this model is experimentally demonstrated on a HybridPACK Drive FS820R08A6P2 power module from Infineon, and the model is found to offer significantly better accuracy compared to the existing models.

: http://publica.fraunhofer.de/documents/N-491397.html