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Reliability investigation on SiC BJT power module

 
: Otto, A.; Kaulfersch, E.; Frankeser, S.; Brinkfeldt, K.; Zschieschang, O.; Rzepka, S.

MESAGO PCIM GmbH, Stuttgart:
PCIM Europe 2016. Proceedings. CD-ROM : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, 10 - 12 May 2016
Berlin: VDE-Verlag, 2016
ISBN: 978-3-8007-4186-1
ISBN: 3-8007-4186-5
pp.1063-1071
International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management <2014, Nuremberg>
English
Conference Paper
Fraunhofer ENAS ()

Abstract
In this paper reliability investigation results for a power module fully based on silicon carbide (SiC) devices are presented. The module comprises four SiC bipolar junction transistors (BJT) and four SiC diodes in half-bridge configuration and is part of a newly developed 3-phase inverter for construction vehicles as well as for passenger car applications. The reliability investigations include electro-thermal and thermo-mechanical finite element simulations as well as power cycling tests with subsequent failure analyses. Furthermore, a double-sided cooling approach for the SiC BJT power module will be described and its thermal performance compared to the single-sided cooling version.

: http://publica.fraunhofer.de/documents/N-491388.html