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Sn-fueled high-brightness compact EUV light source

: Teramoto, Y.; Santos, B.; Mertens, G.; Kops, R.; Kops, M.; Wezyk, A. von; Bergmann, K.; Yabuta, H.; Nagano, A.; Ashizawa, N.; Taniguchi, Y.; Shirai, T.; Kasama, K.


Optical Society of America -OSA-, Washington/D.C.:
Compact EUV & X-ray Light Sources : Part of High-Brightness Sources and Light-Driven Interactions; 20-22 March 2016, Long Beach, California, United States
Washington, DC: OSA, 2016
ISBN: 978-1-943580-09-5
Paper ES4A.1
Conference "Compact EUV & X-ray Light Sources" (EUVXRAY) <2016, Long Beach/Calif.>
Conference "High-Brightness Sources and Light-Driven Interactions" <2016, Long Beach/Calif.>
Conference Paper
Fraunhofer ILT ()

A compact high-brightness EUV source is needed for high-throughput actinic mask inspection in EUV lithography. Ushio is developing a light source utilizing LDP technology where rotating Sn-covered electrodes, trigger lasers and pulsed electrical discharge are employed to create an EUV-emitting plasma at as high repetition rate as 10 kHz. A unique mechanical debris-mitigation system was found to be able to stop neutral particles and reduce fast-ion flux. Clean-photon EUV radiance, of which wavelength is 13.5 nm and band width is 2 %, obtained after the debris-mitigation system was 145 W/mm2/sr. Sputter rate of Ru mirror sample was 2~5 nm/Gpulse whereas Sn deposition was found not to grow with time. Up to 5 days of non-interrupted operation was successfully demonstrated.