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C-V characterization technique for four-terminal GaN-on-Si HEMTs based on 3-port S-parameter measurements

: Salcines, Cristino; Mönch, Stefan; Spudic, Boris; Kallfass, Ingmar

Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin:
CIPS 2018, 10th International Conference on Integrated Power Electronics Systems : March, 20-22, 2018 Stuttgart/Germany
Berlin: VDE-Verlag, 2018 (ETG-Fachbericht 156)
ISBN: 978-3-8007-4540-1
International Conference on Integrated Power Electronics Systems (CIPS) <10, 2018, Stuttgart>
Conference Paper
Fraunhofer IAF ()

This paper presents a low complexity measurement technique to characterize state-of-the-art GaN-on-SiHEMTs based on 3-port S-parameter measurements. The proposed measurement technique permits the C-V characterization of the six inter-electrode capacitances (CGS, CGD, CDS, CBS, CBG, CBD) inherent in a 4-terminal GaN-on-Si HEMT up to 1 kV using a single low-budget test fixture. A-state-of-the-art GaN-on-Si power HEMT available in the market is used as DUT to validate the proposed measurement technique. Measurements show a good agreement with data sheet values and transistor model simulations.