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Monolithically integrated GaN-on-Si power circuits

: Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Quay, Rüdiger; Ambacher, Oliver

Japan Society of Applied Physics -JSAP-:
International Conference on Solid State Devices and Materials, SSDM 2017 : September 19-22, 2017, Sendai, Japan
Tokyo: JSAP, 2017
International Conference on Solid State Devices and Materials (SSDM) <49, 2017, Sendai>
Conference Paper
Fraunhofer IAF ()

This paper presents different monolithically-integrated power circuits, fabricated in a 600 V-class GaN-on-Si heterojunction technology. High performance and high functionality are demonstrated by examples of a HEMT with integrated gate driver, of an integrated temperature sensor, of a half-bridge, and of a multilevel inverter topology.