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Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power

: Schwantuschke, Dirk; Brueckner, Peter; Wagner, Sandrine; Dammann, Michael; Mikulla, Michael; Quay, Rüdiger


Pasya, I. ; Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Asia Pacific Microwave Conference, APMC 2017 : November 13-16, 2017, Renaissance Kuala Lumpur Hotel; Proceedings
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5386-0640-7
ISBN: 978-1-5386-0639-1
ISBN: 978-1-5386-0641-4
Asia Pacific Microwave Conference (APMC) <2017, Kuala Lumpur>
Conference Paper
Fraunhofer IAF ()
Key Publication

This paper reports the enhancement of the 100 nm GaN high-electron-mobility transistor and circuit technology by two evolutionary process development steps. Both, the application of a new gate-metallization and an optimized nitride deposition increases the high-frequency performance of the GaN-based technology significantly, up to measured ft = 100 GHz and fmax = 300 GHz values, respectively. The enhancement of the considered process development is also verified on circuit level by the realization of a power amplifier. The circuit, targeting the E-band satellite communication frequencies (71-76 GHz & 81- 86 GHz), demonstrates a high gain at a maximum of 27 dB, along with a high saturated output power of more than 1 W within the entire frequency range of interest.