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Electrical resistivity of low temperature sintered perovskites

Spezifischer Widerstand von Perowskiten gesintert bei niedriger Temperatur
 
: Megel, S.; Eichler, K.; Trofimenko, N.; Hoehn, S.

:

Ivers-Tiffee, E.:
Solid State Ionics 15. Proceedings of the 15th International Conference on Solid State Ionics 2005. Vol.1 : Baden-Baden, Germany, 17-22 July 2005
Amsterdam: Elsevier, 2006 (Solid state ionics 177.2005,Nr.19-25)
pp.2099-2102
International Conference on Solid State Ionics <15, 2005, Baden-Baden>
English
Conference Paper, Journal Article
Fraunhofer IKTS ()
perovskite; resistivity; SOFC; contact layers

Abstract
LanthanumManganese perovskites are suitable for application as a cathode contact layer in SOFC-stacks. This work describes the resistivity of LanthanumManganese samples which were pre-sintered at different temperatures before annealing at 850 °C in air. Due to the different degrees of sintering, measured resistivity values of low temperature sintered perovskites are higher than resistivity values reported in the literature. For a low resistive and long-term stable contact between cathode and interconnector in SOFC stacks, it is necessary to search for an optimal contact layer made of paste. The main factors affecting the properties of the contact layer are the chemical composition, the grain size distribution of the powder and the organic content of the paste. The results of this work show that with several LanthanumManganese perovskites low resistivity with low sintering temperature can be realized. A bimodal grain size distribution is favorable for a low ageing rate. The fine fraction is responsible for generating the conduction paths and the coarse fraction prevents the volume shrinkage. The paste for the contact layer should have an optimal content of organic. Empirical models are not sufficient to estimate the resistivity of the low temperature sintered perovskites from known bulk resistivity and porosity.

: http://publica.fraunhofer.de/documents/N-49001.html