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Analysis of silicon solar cells with poly-Si/SiOx carrier-selective base and emitter contacts

: Nicolai, Massimo; Zanuccoli, Mauro; Feldmann, Frank; Hermle, Martin; Fiegna, Claudio

Postprint urn:nbn:de:0011-n-4844291 (644 KByte PDF)
MD5 Fingerprint: 4628128a6a27080fac72ac2c4a7a5cc5
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Created on: 24.5.2018

IEEE Journal of Photovoltaics 8 (2018), No.1, pp.103-109
ISSN: 2156-3381
ISSN: 2156-3403
European Commission EC
H2020; 727529; DISC
Double side contacted cells with innovative carrier-selective contacts
Journal Article, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen

Passivating contacts are a promising technology to enhance silicon solar cells conversion efficiency. In this paper, we present a simulation study carried out by using physical models calibrated on the basis of experimental data, aimed at understanding the electrical properties of front emitter silicon solar cells featuring top/rear poly-Si/SiOx selective contacts. Furthermore, we propose a rear junction (RJ) design that desensitizes the fill factor to top electrode resistivity. According to our simulations, the RJ scheme addresses the possibility to omit the transparent conductive oxide allowing promising conversion efficiency of silicon solar cells with carrier-selective contacts. In addition, the influence of the surface recombination velocity at the c-Si/SiOx interfaces and of the effective tunneling masses is investigated.