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Complementary field-effect transistors for flexible electronics

 
: Hilleringmann, U.; Vidor, F.F.; Meyers, T.

:

Du Plessis, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Fourth Conference on Sensors, MEMS, and Electro-Optic Systems 2016 : 18-20 September 2016, Skukuza, Kruger National Park, South Africa
Bellingham, WA: SPIE, 2017 (Proceedings of SPIE 10036)
ISBN: 978-1-5106-0513-8
ISBN: 978-1-5106-0514-5
Paper 100360K, 6 pp.
South African Conference on Sensors, MEMS, and Electro-Optic Systems (SMEOS) <4, 2016, Kruger National Park>
English
Conference Paper
Fraunhofer ENAS ()

Abstract
Key issues for flexible complementary electronics are low temperature processing, sufficient performance of the integrated p- and n-type FET devices, and cheap semiconducting and dielectric materials. Organic semiconductors commonly depict p-type behavior, whereas metal oxide semiconductors show n-type characteristics. This paper presents a new approach for common integration of organic and ZnO transistors on transparent substrates for complementary transistor electronics. The gate dielectric consists of a special high-k resin, the metallization utilizes Au and Al films. The thermal budget for processing of the devices is limited to 120°C to enable foil substrates.

: http://publica.fraunhofer.de/documents/N-481566.html