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Total ionizing dose tests of Power Bipolar Transistors and SiC power devices for JUICE

Poster presented at European Conference on RADiation Effects on Components and Systems, RADECS 2017, Geneva, Switzerland, 02 - 06 October 2017
 
: Steffens, Michael; Höffgen, Stefan; Poizat, Marc

:
Poster urn:nbn:de:0011-n-4811334 (573 KByte PDF)
MD5 Fingerprint: 7e5aa7a8a990ff1d78d404e5da56d1d4
Created on: 23.1.2018


2017, 1 Folie
European Conference on RADiation Effects on Components and Systems (RADECS) <2017, Geneva>
English
Poster, Electronic Publication
Fraunhofer INT ()

Abstract
We present radiation tests performed on Power bipolar transistors, which evaluated concerning their ELDRS sensitivity to TID levels up to 200 krad(Si) with Co60. Additionally a selection of commercial SiC power devices are tested with Co60 at high dose rates to TID levels of 1 Mrad(Si).

: http://publica.fraunhofer.de/documents/N-481133.html