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2017
Conference Paper
Titel
Low temperature Cu/In bonding for 3D integration
Abstract
This study represents the results of Cu/In bonding based on solid-liquid interdiffusion (SLID) principle for 3D integration. Fine-pitch interconnects were successfully fabricated at the bonding temperature of 170 degrees C. The final microstructure of the interconnects consists of Cu and Cu/In intermetallic compounds (IMCs) and it is described in detail. The influence of the isothermal storage on the microstructure development is investigated as well.