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High-power InP-based waveguide integrated modified uni-traveling-carrier photodiodes

: Zhou, G.; Runge, P.; Keyvaninia, S.; Seifert, S.; Ebert, W.; Mutschall, S.; Seeger, A.; Li, Q.L.; Beling, A.


Journal of Lightwave Technology 35 (2017), No.4, pp.717-721
ISSN: 0733-8724
Optical Fiber Communications Conference (OFC) <2016, Anaheim/Calif.>
Journal Article, Conference Paper
Fraunhofer HHI ()

We demonstrate monolithic InP-based high-power high-speed waveguide integrated single and balanced modified UTC photodetectors. The single PD chip generates maximum RF output power levels of 8.9 dBm to 5.1 dBm in the frequency range between 60 GHz and 120 GHz. The balanced PD chip has a 3 dB-bandwidth of 80 GHz and generates 2 dBm RF output power at this frequency.