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MOVPE Grown Gallium Phosphide-Silicon Heterojunction Solar Cells

: Feifel, M.; Ohlmann, J.; Benick, J.; Rachow, T.; Janz, S.; Hermle, M.; Dimroth, F.; Belz, J.; Beyer, A.; Volz, K.; Lackner, D.


IEEE Journal of Photovoltaics 7 (2017), No.2, pp.502-507
ISSN: 2156-3381
ISSN: 2156-3403
Bundesministerium für Bildung und Forschung BMBF
Deutsche Forschungsgemeinschaft DFG
SFB 1083; SFB 1083 "Structure and Dynamics of Internal Interfaces"
Journal Article
Fraunhofer ISE ()

Gallium phosphide (GaP) is, in theory, a near-ideal heteroemitter for silicon solar cells due to its electronic and crystal properties. In this paper, we present n-type gallium phosphide on p-type silicon heterojunction solar cells which have been prepared by direct growth viametal-organic vapor phase epitaxy (MOVPE). The devices show very promising results in quantum efficiency and current density. However, the open-circuit voltage of 560 mV is far from ideal. The investigation of two different nucleation processes reveals a significant influence of the antiphase domain density at the GaP/Si interface on the open-circuit voltage.