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Dislocation formation in heavily As-doped Czochralski grown silicon

 
: Stockmeier, Ludwig; Lehmann, Lothar; Miller, Alfred; Reimann, Christian; Friedrich, Jochen

:
Fulltext urn:nbn:de:0011-n-4805430 (748 KByte PDF)
MD5 Fingerprint: 9de874573fb5f7d56d14e1910e4c32fc
Created on: 19.3.2019


Crystal research and technology 52 (2017), No.8, Art. 1600373, 16 pp.
ISSN: 0023-4753
ISSN: 0232-1300
Polish Society for Crystal Growth (International Conference) (ICPSCG) <10, 2016, Zakopane>
European Commission EC
H2020; 662133; PowerBase
English
Journal Article, Conference Paper, Electronic Publication
Fraunhofer IISB ()

Abstract
During the growth of <100>-oriented, heavily n-type doped silicon crystals by the Czochralski method dislocation formation occurs frequently, leading to a reduction of the crystal yield. Up to now, it is not clear where and why the dislocations form. Therefore, heavily As-doped crystals were studied in this work in more detail by means of X-ray topography (XRT) and synchrotron X-ray topography (SXRT). From the data obtained it is concluded that dislocations form during growth of the top cone of the crystals in the vicinity of one of the four so-called growth ridges.

: http://publica.fraunhofer.de/documents/N-480543.html