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Impact of the homogeneous junction breakdown in IBC solar cells on the passivation quality of AL2O3 and SiO2. Degradation and regeneration behavior

: Müller, Ralph; Reichel, Christian; Yang, Xinbo; Richter, Armin; Benick, Jan; Hermle, Martin

Fulltext (PDF; )

Energy Procedia 124 (2017), pp.365-370
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <7, 2017, Freiburg>
European Commission EC
FP7; 608498; HERCULES
High efficiency rear contact solar cells and ultra powerful modules
Bundesministerium für Wirtschaft und Technologie BMWi
0325292; ForTeS
Entwicklung fortschrittlicher Technologien zur Effizienzsteigerung von Silicium-Solarzellen der nächsten Generation
Journal Article, Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen

Within the last years, many different approaches for the simplified fabrication of interdigitated back-contact (IBC) solar cells have been developed. Most of those concepts result in emitter and back-surface field (BSF) regions that are in direct contact to each other which leads to a controlled breakdown under reverse bias at the p+n+ junction. In this work, the influence of the reverse breakdown on the passivation quality of Al2O3 and SiO2 at the p+n+ junction is investigated, not only shedding light on the degradation but also on the regeneration behavior of the cells. It was found that cells with Al2O3 passivation on the back side degrade during reverse breakdown whereas sister cells with SiO2 passivation were rather unaffected. Consequently, the degradation seems to be related to the passivation layer. However, it is shown that the passivation can be regenerated even under normal operation condition. A possible explanation is the discharging of interface traps, which are getting recharged already at room temperature.