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Rapid vapor-phase direct diffused emitter for solar cell applications

 
: Kühnhold-Pospischil, S.; Gust, E.; Amiri, D.; Richter, A.; Steinhauser, B.; Drießen, M.; Michl, B.; Greulich, J.; Benick, J.; Lindekugel, S.; Janz, S.

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Fulltext urn:nbn:de:0011-n-4774732 (420 KByte PDF)
MD5 Fingerprint: 650c1d1dca8d142d631e391b65fc72c0
Created on: 26.1.2018


Smets, A.:
33rd European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2017 : Proceedings of the international conference held in Amsterdam, The Netherlands, 25 September - 29 September 2017
München: WIP, 2017
ISBN: 978-3-936338-47-8
ISBN: 3-936338-47-7
pp.396-398
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <33, 2017, Amsterdam>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; Photovoltaik; Silicium-Photovoltaik; feedstock; Kristallisation und Wafering; boron; diffusion; therml processing; doping; n-type

Abstract
Emitter diffusion using POCl3 or BBr3 as precursor is a time consuming process and requires chemical treatments to remove silicate glasses after the diffusion process. Moreover, no standard emitter diffusion process using BBr3 is established so far. A so called rapid vapor direct diffused emitter (RVD) might be an alternative to these POCl3 and BBr3 diffusion processes. Here, we present several RVD emitter profiles in n-type wafers achieved using the rapid thermal chemical vapor deposition (RTCVD 160) tool by varying diborane (B2H6) concentrations, peak temperatures and durations. Further, temperature induced degradation of carrier lifetimes is observed.

: http://publica.fraunhofer.de/documents/N-477473.html